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Preliminary data
SPD08P05 SPU08P05
SIPMOS (R) Power Transistor
* P channel * Enhancement mode * Avalanche rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
VDS -50 V -50 V
ID -8 A -8 A
RDS(on) 0.3 0.3
Package
Ordering Code
SPD08P05 SPU08P05
P-TO252 P-TO251
Q67000-. . . - . . . Q67000-. . . - . . .
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current
TC = 30 C
ID
A -8
Pulsed drain current
TC = 25 C
IDpuls
-32
EAS
Avalanche energy, single pulse
ID = -8 A, VDD = -25 V, RGS = 25 L = 2.2 mH, Tj = 25 C
mJ
70
VGS Ptot
Gate source voltage Power dissipation
TC = 25 C
20
40
V W
Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient (PCB mount)** Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJA RthJA
-55 ... + 150 -55 ... + 150
C
3.1 50 100
55 / 150 / 56
K/W
** when mounted on 1 " square PCB ( FR4 );for recommended footprint
Semiconductor Group
1
23/Jan/1998
Preliminary data
SPD08P05 SPU08P05
Electrical Characteristics, at Tj = 25C, unless otherwise specified
Parameter
Symbol min.
Values typ. max.
Unit
Static Characteristics
Drain- source breakdown voltage
V GS = 0 V, ID = -0.25 mA, Tj = 25 C
V (BR)DSS
V -50 -
Gate threshold voltage
V GS=V DS, ID = 1 mA
V GS(th)
-2.1
IDSS
-3
-4 A
Zero gate voltage drain current
V DS = -50 V, VGS = 0 V, Tj = 25 C V DS = -50 V, VGS = 0 V, Tj = 125 C
IGSS
-0.1 -10
-1 -100 nA
Gate-source leakage current
V GS = -20 V, V DS = 0 V
RDS(on)
-10
-100
Drain-Source on-resistance
V GS = -10 V, ID = -5 A
0.25 0.3
Semiconductor Group
2
23/Jan/1998
Preliminary data
SPD08P05 SPU08P05
Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit
Transconductance
V DS 2 * ID * RDS(on)max, ID = 5 A
gfs
S 1.5 2.3 pF 750 1000
Input capacitance
V GS = 0 V, V DS = -25 V, f = 1 MHz
Ciss
Output capacitance
V GS = 0 V, V DS = -25 V, f = 1 MHz
Coss
Crss
270
400
Reverse transfer capacitance
V GS = 0 V, V DS = -25 V, f = 1 MHz
td(on)
120
180 ns
Turn-on delay time
V DD = -30 V, V GS = -10 V, ID = -2.9 A RG = 50
tr
20
30
Rise time
V DD = -30 V, V GS = -10 V, ID = -2.9 A RG = 50
td(off)
110
170
Turn-off delay time
V DD = -30 V, V GS = -10 V, ID = -2.9 A RG = 50
tf
70
90
Fall time
V DD = -30 V, V GS = -10 V, ID = -2.9 A RG = 50
-
100
140
Semiconductor Group
3
23/Jan/1998
Preliminary data
SPD08P05 SPU08P05
Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit
Inverse diode continuous forward current
TC = 25 C
IS
A -8
Inverse diode direct current,pulsed
TC = 25 C
ISM
V SD
-
-32 V
Inverse diode forward voltage
V GS = 0 V, IF = -16 A
trr
-1.25
-1.7 ns
Reverse recovery time
V R = -30 V, IF=lS, diF/dt = 100 A/s
Qrr
90
C
Reverse recovery charge
V R = -30 V, IF=lS, diF/dt = 100 A/s
-
0.23
-
Semiconductor Group
4
23/Jan/1998
Preliminary data
SPD08P05 SPU08P05
Power dissipation Ptot = (TC)
Drain current ID = (TC) parameter: VGS -10 V
-9 A ID -7 -6 -5 -4 -3 -2 -1 0
45 W Ptot 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 C 160
0
20
40
60
80
100
120
C
160
TC
TC
Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C
-10 2
Transient thermal impedance Zth JC = (tp) parameter: D = tp / T
10 1
A ID -10 1
) on S( D R
t = 190.0s p
K/W ZthJC
/ID = V
D S
10 0
1 ms
10 ms
10 -1 D = 0.50 0.20
-10 0 DC 10 -2
0.10 0.05 0.02 single pulse 0.01
-10 -1 0 -10
-10
1
V -10
2
VDS
10 -3 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
0
tp
Semiconductor Group
5
23/Jan/1998
Preliminary data
SPD08P05 SPU08P05
Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C
-18 A
VGS [V]
Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C
0.9
a b c d e f g h i
Ptot = 40W
l
k
a b -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0 -9.0
ID
-14 -12
RDS (on) 0.7 0.6 0.5 0.4 0.3
j
c d
j
e f g
-10 -8 -6 -4 -2 0 0 -2 -4 -6 -8 -10 -12 -14
i
h
hi g
j
k -10.0
f l -20.0 e d c a b
0.2 0.1 0.0 0 -2 -4 -6 -8 -10 -12 A -16
VGS [V] =
a b c d e f -4.5 -4.0 -5.5 -6.0 -6.5 -7.0 -7.5 -5.0 j g h i -8.0 -9.0 -10.0 -20.0
-16 V -19
VDS
ID
Typ. transfer characteristics ID = f (V GS)
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 s
VDS2 x ID x RDS(on)max
-15 A -13
I
D
parameter: tp = 80 s,
V DS2 x ID x RDS(on)max
4.0 S
g
-12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 0 -1 -2 -3 -4 -5 -6 -7 -8 V
VGS
3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0.0
fs
-10
0
-2
-4
-6
-8
-10
-12
ID
A
-15
Semiconductor Group
6
23/Jan/1998
Preliminary data
SPD08P05 SPU08P05
Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = -5 A, VGS = -10 V
0.70
Gate threshold voltage VGS (th) = (Tj ) parameter: VGS = VDS, ID = 1 mA
-4.6 V -4.0 VGS(th) -3.6 -3.2 -2.8 typ 98%
0.60 RDS (on)0.55 0.50 0.45 0.40 98% 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 -60 -20 20 60 100 C 160 typ
-2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0.0 -60 -20 20
2%
60
100
C
160
Tj
Tj
Typ. capacitances
C = f (VDS)
parameter:VGS = 0V, f = 1MHz
10 4
Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s
-10 2
pF
C
A IF
10 3
Ciss
-10 1
Coss
10 2
Crss
-10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%)
10 1 0
-5
-10
-15
-20
-25
-30
V
VDS
-40
-10 -1 0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
V
-3.0
VSD
Semiconductor Group
7
23/Jan/1998
Preliminary data
SPD08P05 SPU08P05
Avalanche energy EAS = (Tj) parameter: ID = -8 A, VDD = -25 V RGS = 25 , L = 2.2 mH
75 mJ 65 EAS 60 55 50 45 40 35 30 25 20 15 10 5 0 20 40 60 80 100 120 C 160
Drain-source breakdown voltage V(BR)DSS = (Tj)
-60 V -58 V(BR)DSS-57 -56 -55 -54 -53 -52 -51 -50 -49 -48 -47 -46 -45 -60 -20 20 60 100 C 160
Tj
Tj
Semiconductor Group
8
23/Jan/1998
Preliminary data
SPD08P05 SPU08P05
Package Outlines
P-TO252 Dimension in mm
P-TO251 Dimension in mm
Semiconductor Group
9
23/Jan/1998

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